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Orientation growth and morphological developments of chemically deposited Ce-doped lanthanum zirconate films
Surface and Interface Analysis ( IF 1.6 ) Pub Date : 2021-05-18 , DOI: 10.1002/sia.6959
Yao Wang 1 , Fan Li 1 , Jianqing Feng 2 , Lihua Jin 2 , Chengshan Li 2 , Yuyan Sun 3
Affiliation  

A series of Ce-doped lanthanum zirconate (LZO) thin films were fabricated by chemical solution deposition method on textured metallic substrates. Orientation growth and morphological developments of chemically deposited doped LZO films were studied. Thus, characteristics, including X-ray diffraction, X-ray photoelectron spectra, and atomic force microscopy, were applied. The results show that a single (00l) orientation of LZO grains obviously converted to random orientation as Ce content increases in doped LZO film. However, the doping of Ce element is beneficial to the refinement of LZO grain and the improvement of surface flatness of LZO film. The proportion of Ce3+ is very different in film when Ce element with variable valence is doped to be substitution of La or that of Zr in doped LZO, which affects the oxygen vacancy concentration and the nucleation process of the oxide film. Therefore, it can be considered that the composition and structural stability as well as the nucleation energy barrier among the doped LZO film with different Ce content result in the great differences in the growth orientation and microstructure of the final crystal film.

中文翻译:

化学沉积 Ce 掺杂锆酸镧薄膜的取向生长和形态发展

通过化学溶液沉积法在有纹理的金属基底上制备了一系列掺杂 Ce 的锆酸镧 (LZO) 薄膜。研究了化学沉积掺杂 LZO 薄膜的取向生长和形态发展。因此,应用了特性,包括 X 射线衍射、X 射线光电子光谱和原子力显微镜。结果表明,随着掺杂LZO薄膜中Ce含量的增加,LZO晶粒的单一(00 l)取向明显转变为随机取向。然而,Ce元素的掺杂有利于LZO晶粒的细化和LZO薄膜表面平整度的提高。Ce 3+的比例当掺杂不同价态的Ce元素取代掺杂LZO中的La或Zr时,薄膜中有很大差异,这会影响氧化膜的氧空位浓度和成核过程。因此,可以认为,不同Ce含量的掺杂LZO薄膜之间的成分和结构稳定性以及成核能垒导致最终晶体薄膜的生长取向和微观结构存在很大差异。
更新日期:2021-07-07
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