Abstract

For the first time in Russia, the Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences (IUHFSE, RAS) developed, manufactured, and investigated three types of monolithic integrated circuits for the Ku and Ka-bands based on gallium nitride heterostructures on silicon substrates with a diameter of 100 mm. The measured microwave characteristics of the obtained microcircuits are presented.

中文翻译：

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硅衬底上的Ku和Ka带氮化镓单片集成电路

摘要

俄罗斯科学院莫克罗夫超高频半导体电子研究所（IUHFSE，RAS）首次在俄罗斯开发，制造并研究了基于氮化镓异质结构的Ku和Ka波段的三种单片集成电路直径为100毫米的硅基板上。给出了所获得的微电路的测量的微波特性。