In this work, we design and simulate novel 32 nm carbon nanotube field effect transistor (CNTFET) as well as complementary metal oxide semiconductor (CMOS)-based negative class AB second generation current conveyors (CC) (CNTFET-CCII and CMOS-CCII−). The comparative analyses of various performance measuring parameters of both these CCII's have been performed. A significant improvement in current and voltage bandwidths, terminal X and Y impedances at lesser total harmonic distortions and reduced power consumption have been observed in the proposed CNTFET-based CCII− in comparison to its CMOS-based counterpart. Further, a CNTFET-based active grounded inductor (AGI) has been designed and simulated for the first time using the proposed CNTFET-CCII− and our recently designed CNTFET-CCII+ and has been compared with the CMOS-based AGI. To validate the performance of the simulated AGI's, single input multi output current mode filter and third-order high pass Butterworth filter have also been designed and simulated. The simulation results reveal that the performance of the CNTFET-AGI-based applications are close to ideal response with less power consumption and temperature insensitivity with reduced active chip die area of 0.16 μm² and can be efficiently used for low voltage, low power, and high frequency applications.

中文翻译：

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使用正负电流传送器和应用的基于 CNTFET 的有源接地电感器

在这项工作中，我们设计并模拟了新型 32 nm 碳纳米管场效应晶体管 (CNTFET) 以及基于互补金属氧化物半导体 (CMOS) 的负 AB 类第二代电流传输器 (CC)（CNTFET-CCII 和 CMOS-CCII- ）。已经对这两种 CCII 的各种性能测量参数进行了比较分析。与基于 CMOS 的对应物相比，在提议的基于 CNTFET 的 CCII- 中观察到电流和电压带宽、端子 X 和 Y 阻抗在较小的总谐波失真和降低的功耗方面的显着改善。此外，首次使用提议的 CNTFET-CCII− 和我们最近设计的 CNTFET-CCII+ 设计和模拟了基于 CNTFET 的有源接地电感器 (AGI)，并与基于 CMOS 的 AGI 进行了比较。为了验证模拟 AGI 的性能，还设计并模拟了单输入多输出电流模式滤波器和三阶高通巴特沃斯滤波器。仿真结果表明，基于 CNTFET-AGI 的应用的性能接近理想响应，功耗更低，温度不敏感，有源芯片管芯面积减少 0.16 μm²可高效用于低电压、低功率和高频应用。