Abstract

Chromium oxide thin films were grown on Al₂O₃ substrates by ablating a pure Cr₂O₃ target using a KrF excimer laser. The energy density on the target surface was 1.4 J/cm² with a pulse repetition of 3 Hz. The thin films were calcinated at 550°C for 1 h. The structural analysis of the grown layer was achieved using FTIR spectroscopy and X-ray diffraction techniques. The XRD analysis shows the formation of Cr₂O₃ with crystalline size ranging from 35–40 nm, further confirming from the infrared absorption bands. The PLD deposited thin films show a predominance of the higher oxidation states of chromium while the antiferromagnetic Cr₂O₃ phase is mostly present in films grown in an O₂ ambient. The optical and electrical properties were studied using ellipsometry, UV-vis spectroscopy and I–V techniques. The direct band gap and indirect optical band gap were determined and refractive index, extinction coefficient, absorption coefficient and dielectric constant were measured and presented in this paper. The current voltage characteristics are also part of this work.

中文翻译：

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应用领域的氧化铬Cr 2 O 3薄膜的结构，光学和电学性质

摘要

通过使用KrF准分子激光烧蚀纯Cr ₂ O ₃靶，在Al ₂ O ₃衬底上生长氧化铬薄膜。目标表面上的能量密度为1.4 J / cm ²，脉冲重复频率为3 Hz。将薄膜在550℃下煅烧1小时。生长层的结构分析是使用FTIR光谱和X射线衍射技术完成的。X射线衍射分析表明形成了Cr ₂ O ₃，其晶体尺寸为35-40 nm，这从红外吸收带进一步证实。PLD沉积的薄膜主要表现出较高的铬氧化态，而反铁磁Cr ₂ O在O ₂环境中生长的薄膜中主要存在₃相。使用椭偏仪，紫外可见光谱和IV技术研究了光学和电学性质。确定了直接带隙和间接光学带隙，并测量并给出了折射率，消光系数，吸收系数和介电常数。当前的电压特性也是这项工作的一部分。