An on-chip nanopower RC relaxation oscillator is developed in a 180-nm standard CMOS process, consuming 300 nW while running at 10 kHz. Employing a frequency compensation scheme that reduces the frequency drift introduced by comparator offset and delay, the proposed oscillator achieves a significant low temperature coefficient. Furthermore, a supply regulation structure is used to reduce the frequency sensitivity to supply voltage variations. Post-simulation results show that the frequency variation against temperature is 105 ppm/\(^{\circ }\)C in the temperature range from 0 to 85 \(^{\circ }\)C, and the line sensitivity is 2.19%/V with the supply voltage changing from 1.05 to 1.45 V. At offset frequencies of 100 Hz and 1 kHz, the simulated phase noises are −50 and −71 dBc/Hz, respectively.

片上纳米功率RC弛豫振荡器采用180纳米标准CMOS工艺开发，在10 kHz的频率下运行时功耗300 nW。通过采用一种频率补偿方案，该方案可减少比较器失调和延迟所引起的频率漂移，因此所提出的振荡器可实现显着的低温系数。此外，电源调​​节结构用于降低频率对电源电压变化的敏感性。后仿真结果表明，在0至85 \（^ {\ circ} \）的温度范围内，温度随频率的变化为105 ppm / \（^ {\ circ} \） CC，电源电压从1.05变为1.45 V时，线路灵敏度为2.19％/ V。在100 Hz和1 kHz的偏移频率下，模拟的相位噪声分别为-50和-71 dBc / Hz。