Reliability improvement of IGZO-TFT in hybrid process with LTPS,Journal of the Society for Information Display

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Reliability improvement of IGZO-TFT in hybrid process with LTPS
Journal of the Society for Information Display ( IF 1.7 ) Pub Date : 2021-05-13 , DOI: 10.1002/jsid.1032
Mehadi Aman ₁ , Yujiro Takeda ₁ , Kazuatsu Ito ₁ , Kaoru Yamamoto ₁ , Kohei Tanaka ₁ , Hiroshi Matsukizono ₁ , Wataru Nakamura ₁ , Naoki Makita ₁

Affiliation

An AMOLED panel using hybrid backplane technology based on p-type low temperature polycrystalline silicon (p-LTPS) and n-type indium–gallium–zinc–oxide (n-IGZO) thin-film transistors (TFTs) has been successfully manufactured. New pixel and Gate-on-Array (GOA) circuits were designed and fabricated using this technology. GOA with CMOS inverter is realized by utilizing both IGZO and p-LTPS. The hybrid backplane AMOLED panel can operate between 1 and 120 Hz, which enables both high refresh rate and low standby power display applications. Furthermore, the AMOLED panel lifetime has markedly enhanced by improving IGZO TFT's uniformity and reliability.

中文翻译：

LTPS混合工艺中IGZO-TFT的可靠性提高

使用基于p型低温多晶硅（p-LTPS）和n型铟镓锌氧化锌（n-IGZO）薄膜晶体管（TFT）的混合背板技术成功制造了AMOLED面板。使用这种技术设计和制造了新的像素和阵列门（GOA）电路。通过同时使用IGZO和p-LTPS来实现具有CMOS反相器的GOA。混合背板AMOLED面板可以在1至120 Hz的频率范围内工作，从而可以实现高刷新率和低待机功率显示应用。此外，通过提高IGZO TFT的均匀性和可靠性，AMOLED面板的使用寿命得到了显着提高。

更新日期：2021-05-25

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