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Capacitor Reused Gate Driver for Compact In-Cell Touch Displays
IEEE Journal of the Electron Devices Society ( IF 2.0 ) Pub Date : 2021-05-03 , DOI: 10.1109/jeds.2021.3077141
Shuai Shen , Congwei Liao , Jiwen Yang , Hailong Jiao , Shengdong Zhang

A thin-film transistor (TFT) integrated gate driver is proposed for compact in-cell touch display, where one capacitor is reused for both turning on low-level maintaining transistors via voltage coupling and maintaining the re-start charge during the touch sensing period. The gate terminal of buffer transistor is thus free of electrical stress during touch sensing period, and can be re-charged for the subsequent re-start period, leading to minimal variations in the transient response. With the capacitor reusing scheme and a capacitor stacking structure, the area of the single stage gate driver is decreased to 645 μm ×210 μm. The fabricated a-Si TFT gate driver with 8 cascaded stages shows that the rising and falling time variations among re-start and normal gate driver stages are less than 1 μs. Versatile touch sensing modes and bidirectional scanning functions are verified.

中文翻译:


用于紧凑型内嵌式触摸显示器的电容器重复使用栅极驱动器



提出了一种用于紧凑型内嵌式触摸显示器的薄膜晶体管 (TFT) 集成栅极驱动器,其中重复使用一个电容器来通过电压耦合打开低电平维持晶体管并在触摸感应期间维持重新启动电荷。因此,缓冲晶体管的栅极端子在触摸感测期间没有电应力,并且可以在随后的重新启动期间重新充电,从而导致瞬态响应的变化最小。通过电容器复用方案和电容器堆叠结构,单级栅极驱动器的面积减小至645μm×210μm。所制造的具有 8 个级联级的 a-Si TFT 栅极驱动器表明,重新启动和正常栅极驱动器级之间的上升和下降时间变化小于 1 μs。验证了多功能触摸感应模式和双向扫描功能。
更新日期:2021-05-03
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