当前位置: X-MOL 学术arXiv.cs.ET › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories
arXiv - CS - Emerging Technologies Pub Date : 2021-05-13 , DOI: arxiv-2105.06401
Mohammad Nasim Imtiaz Khan, Swaroop Ghosh

At the end of Silicon roadmap, keeping the leakage power in tolerable limit and bridging the bandwidth gap between processor and memory have become some of the biggest challenges. Several promising Non-Volatile Memories (NVMs) such as, Spin-Transfer Torque RAM (STTRAM), Magnetic RAM (MRAM), Phase Change Memory (PCM), Resistive RAM (RRAM) and Ferroelectric RAM (FeRAM) are being investigated to address the above issues since they offer high density and consumes zero leakage power. On one hand, the desirable properties of emerging NVMs make them suitable candidates for several applications including replacement of conventional memories. On the other hand, their unique characteristics such as, high and asymmetric read/write current and persistence bring new threats to data security and privacy. Some of these memories are already deployed in full systems and as discrete chips and are believed to become ubiquitous in future computing devices. Therefore, it is of utmost important to investigate their security and privacy issues. Note that these NVMs can be considered for cache, main memory or storage application. They are also suitable to implement in-memory computation which increases system throughput and eliminates Von-Neumann Bottleneck. Compute-capable NVMs impose new security and privacy challenges that are fundamentally different than their storage counterpart. This work identifies NVM vulnerabilities, attack vectors originating from device level all the way to circuits and systems considering both storage and compute applications. We also summarize the circuit/system level countermeasures to make the NVMs robust against security and privacy issues.

中文翻译:

新兴非易失性存储器的安全性和隐私性的综合研究

在芯片路线图的末尾,将泄漏功率保持在可容忍的极限内,弥合处理器与内存之间的带宽差距已成为一些最大的挑战。正在研究几种有希望的非易失性存储器(NVM),例如自旋转移转矩RAM(STTRAM),磁性RAM(MRAM),相变存储器(PCM),电阻RAM(RRAM)和铁电RAM(FeRAM)。由于它们提供高密度并且消耗零泄漏功率,因此存在上述问题。一方面,新兴的NVM的理想特性使其成为多种应用的合适候选者,包括替换传统的存储器。另一方面,它们的独特特性(例如,高非对称读写电流和持久性)给数据安全和隐私带来了新的威胁。这些存储器中的一些已经部署在完整的系统中并作为分立的芯片部署,并被认为在未来的计算设备中无处不在。因此,调查他们的安全和隐私问题至关重要。请注意,可以将这些NVM用于高速缓存,主内存或存储应用程序。它们还适用于实现内存计算,从而提高系统吞吐量并消除了冯·诺依曼瓶颈。具有计算能力的NVM带来了新的安全性和隐私挑战,这些挑战与存储方面的本质上是不同的。这项工作确定了NVM漏洞,即从设备级一直到考虑存储和计算应用程序的电路和系统的攻击媒介。
更新日期:2021-05-14
down
wechat
bug