Single crystals of URu₂Si₂ show below 17.5 K a transition into an ordered state with a significantly reduced entropy. The low temperature phase is called the hidden order (HO) state, because its microscopic origin is still unknown—there are no charge, structural or magnetic transitions associated to HO. Here we report a one-dimensional (1D) charge modulation within the HO state of URu₂Si₂. We perform detailed Scanning Tunneling Microscopy (STM) experiments with high resolution on many atomically flat surfaces of URu₂Si₂ obtained by fracturing single crystals at cryogenic temperatures and find a 1D charge density wave with a large wavevector. We show that the 1D modulation is connected to the dynamical magnetic excitations of the HO through a moiré construction and appears as a consequence of excitations quenched through the interaction between the travelling fracture front and the dynamic modes of the crystal. The combination of fracture dynamics and the dynamics of the solid provides a method to create ground states and shows that charge interactions are among the most relevant features competing with HO in URu₂Si₂.

URu ₂ Si _2的单晶在17.5 K以下显示出转变为有序态，且熵显着降低。低温相称为隐藏阶（HO）状态，因为其微观起源仍是未知的-没有与HO相关的电荷，结构或磁性跃迁。在这里，我们报告在URu ₂ Si ₂的HO状态内的一维（1D）电荷调制。我们在URu ₂ Si _2的许多原子平面上执行高分辨率的详细扫描隧道显微镜（STM）实验。通过在低温下压裂单晶获得，并找到具有大波矢的一维电荷密度波。我们表明，一维调制通过波纹结构连接到HO的动态磁激发，并且由于通过行进的断裂锋面与晶体的动态模式之间的相互作用而被猝灭的激发而出现。断裂动力学与固体动力学的结合提供了一种创建基态的方法，并表明电荷相互作用是URu ₂ Si _2中与HO竞争最相关的特征之一。