Complicated synthesis procedure and instability of 1T-MoS₂ impede its practical application for hydrogen evolution reaction. Here, we propose a new strategy to drive the synthesis of stabilized 1T-MoS₂ by Ni doping. Ni doping forms the NiS covalent bonds, inducing the slip of S atoms and stabilizing 1T structure. The materials were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Electrochemical tests including linear sweep voltammetry etc. indicate that the 1T/2H-MoS₂/8%Ni has an overpotential of 162 mV and a Tafel slope of 80 mV dec⁻¹ along with a good stability.

中文翻译：

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金属半导体1T / 2H-MoS ₂通过杂原子掺杂策略增强电催化氢的释放

1T-MoS _2的合成工艺复杂，不稳定，阻碍了其在析氢反应中的实际应用。在这里，我们提出了一种通过镍掺杂来驱动稳定的1T-MoS ₂合成的新策略。Ni掺杂形成Ni S共价键，诱导S原子滑移并稳定1T结构。通过透射电子显微镜，X射线光电子能谱和拉曼光谱对材料进行了表征。包括线性扫描伏安法等的电化学测试表明，1T / 2H-MoS ₂ /8％Ni具有162 mV的过电势和80 mV dec ^-1的Tafel斜率以及良好的稳定性。