In this paper, we have prepared porous silicon non-enzymatic sensor (Ag/Ps/Si/Ag), using p-type silicon wafer cut into homogeneous pieces, the galvanostatic electrochemical etching process was carried out at different etching duration and constant current density. Optical measurements such as UV spectroscopy and Photoluminescence were performed to calculate the energy gap value and notice the effect of etching time on the porous layer. The morphological structure was obtained by scanning electron microscope and the porosity was calculated by the gravimetric method, then different glucose concentrations (0.1, 1, 10, 100 mg/mL) were exposed to the surface after coating the lower surface with silver and the upper surface with a small circular batch by the thermal evaporation method. The I-V characteristics show that the current density is affected by glucose concentration, thus it can be modified to be an easy fabricated, cheap biosensor for glucose concentration detection.

本文制备了多孔硅非酶传感器（Ag / Ps / Si / Ag），利用p型硅片切成均质片，在不同的蚀刻时间和恒定的电流密度下进行恒电流电化学蚀刻工艺。 。进行了诸如紫外光谱和光致发光的光学测量以计算能隙值并注意到蚀刻时间对多孔层的影响。通过扫描电子显微镜获得形态结构，并通过重量分析法计算孔隙率，然后在下表面覆盖银和上表面后，将不同浓度的葡萄糖（0.1、1、10、100 mg / mL）暴露于表面。表面采用热蒸发法制成小的圆形批料。