In this work, thin films (∼200 nm) of vanadium oxide were deposited on Si (100) substrate by e-beam evaporation method with low-cost V₂O₅ powder. Some of the as-deposited samples were annealed in the argon atmosphere at 500°C for 1 h and cooled at a natural rate in the argon atmosphere. The as-deposited samples were also irradiated with 100 MeV Ag ions beam at different fluences. Grazing incidence X-ray diffraction (GIXRD) and Raman spectroscopy revealed that as-deposited films were composed of the V₆O₁₃ phase (mixed valance state). This V₆O₁₃ phase was transformed into polycrystalline V₂O₅ phase after post-annealing. Raman spectra of irradiated films had a new peak of the V₆O₁₃ phase, and no change was observed at higher fluence, and in the FTIR spectra, bands shifted toward lower wavenumber side at higher fluence. This band shifting toward the lower wavenumber side may be due to the weakening of vanadium oxygen bonds, which create oxygen vacancies in the film. The creation of defects in films was due to the pressure applied by the molten zone, which is formed by the passage of SHIs in the material.

在这项工作中，使用低成本的 V ₂ O ₅粉末通过电子束蒸发法在 Si (100) 衬底上沉积钒氧化物薄膜（~200 nm）。一些沉积态样品在氩气气氛中在 500°C 下退火 1 小时，然后在氩气气氛中以自然速率冷却。沉积的样品也用 100 MeV 的银离子束以不同的能量密度进行辐照。掠入射 X 射线衍射 (GIXRD) 和拉曼光谱表明，沉积的薄膜由 V ₆ O ₁₃相（混合价态）组成。该 V ₆ O ₁₃相转变为多晶 V ₂ O ₅后退火后的阶段。辐照薄膜的拉曼光谱有一个新的V ₆ O ₁₃相峰，在高通量下没有观察到变化，在FTIR光谱中，谱带在高通量下向低波数侧移动。该带向较低波数侧移动可能是由于钒氧键的减弱，这在薄膜中产生了氧空位。薄膜中缺陷的产生是由于熔融区施加的压力，这是由材料中的 SHI 通道形成的。