This paper presents an analytical investigation of the electrostatic properties of a moderately doped symmetric gate-all-around nanowire MOSFET having InGaAs channel. The model is continuous from depletion to strong inversion regime that circumvents regional approach, thus smoothly capturing the transition of the charge profile in all regions of operation. The evolution of the model is facilitated by the solution of quasi 2-D Poisson equation with appropriate boundary conditions in a square gate-all-around geometry, incorporating fixed oxide charge and interface trap defects. The determination of mobile charge density leads to the capacitance-voltage (CV) characteristics as a function of gate bias. The CV profile is investigated subject to scaling of physical parameters and material properties. Further, a threshold voltage model is presented for a long channel gate-all-around device that utilizes the well-known double derivative method. This model accurately predicts the threshold voltage variation with fin width, oxide thickness and channel doping, highlighting room for further improvement in electrostatics by incorporating high-k dielectric. The excellent match between the model results and TCAD simulation reflects the validity of the proposed model.

本文对具有InGaAs通道的中等掺杂对称全栅纳米线MOSFET的静电性能进行了分析研究。该模型是连续的，从耗竭到强大的反演机制都可以绕开区域方法，从而平稳地捕获了所有运行区域中电荷分布的转变。拟二维二维Poisson方程的求解具有正方形边界全方位几何结构中的适当边界条件，并结合了固定的氧化物电荷和界面陷阱缺陷，从而促进了模型的发展。移动电荷密度的确定导致电容电压（CV）特性随栅极偏置的变化而变化。根据物理参数和材料特性的缩放比例来研究CV曲线。更多，提出了一种采用众所周知的双导数方法的长通道全能栅极器件的阈值电压模型。该模型准确地预测了阈值电压随鳍宽度，氧化物厚度和沟道掺杂而变化的情况，从而突出了通过结合高k电介质进一步改善静电的空间。模型结果与TCAD仿真之间的出色匹配反映了所提出模型的有效性。