A normally-off reverse blocking high electron mobility transistor (HEMT) with p-GaN gate and hybrid p-GaN ohmic drain (p-GaN RB-HEMT) has been fabricated and investigated to achieve reverse blocking capability. Compared with conventional p-GaN gate HEMT with ohmic drain (p-GaN HEMT), the proposed device features that a p-GaN layer is embedded into the ohmic drain. This could realize not only the reverse blocking capability, but also the effective suppression of reverse leakage current based on the formed pn junction drain, and an ultralow reverse leakage current of <1 nA/mm at −100 V and a reverse breakdown voltage of −688 V at 1 μA/mm have been achieved in the fabricated p-GaN RB-HEMT. In addition, the device shows a positive threshold voltage of 1.6 V and a forward breakdown voltage of 666 V. Meanwhile, the V_on and R_on have a linear relationship with the increase in p-GaN drain dimension.

已经制造并研究了具有 p-GaN 栅极和混合 p-GaN 欧姆漏极 (p-GaN RB-HEMT) 的常关反向阻断高电子迁移率晶体管 (HEMT) 以实现反向阻断能力。与具有欧姆漏极的传统 p-GaN 栅极 HEMT (p-GaN HEMT) 相比，所提出的器件的特点是将 p-GaN 层嵌入到欧姆漏极中。这不仅可以实现反向阻断能力，还可以基于形成的 pn 结漏极有效抑制反向漏电流，以及 -100 V 时 <1 nA/mm 的超低反向漏电流和 - 反向击穿电压。在制造的 p-GaN RB-HEMT 中已实现 1 μA/mm 时的 688 V。此外，该器件的正阈值电压为 1.6 V，正向击穿电压为 666 V。同时，V_on和R _on与 p-GaN 漏极尺寸的增加呈线性关系。