In this work, the response of the z-axis differential capacitive MEMS accelerometer structure is studied under mechanical shock. The resonant frequency of the accelerometer is 9.12 kHz, and the corresponding time-period (T_n) is 0.11 ms. Simulation of the accelerometer structure under 30 g half-sine acceleration shocks of different durations (0.1–4 ms) revealed that the output amplitude attains the input acceleration shock value when the pulse duration (T) ≥ 0.9 ms. The simulated output time-lag over the input pulse is found to be around 0.2 ± 0.03 msec. The accelerometer showed higher rise-time (10−90 %) and fall-time (90−10 %) for the 0.1–0.5 ms shock pulse durations. The silicon-on-insulator (SOI) MEMS technology is employed to fabricate the accelerometer structure. The packaged accelerometer is tested under the 30 g half-sine acceleration shocks generated by an electrodynamic shaker. The measured output amplitude of the accelerometer achieved the input acceleration value when the shock pulse duration (T) ≥ 9T_n, and the measured time-lag varies from 0.05 to 0.3 msec. The measurement results showed that the output follows the input shock pulse when rise-time (t_r) ≥ T_n and fall-time (t_f) ≥ 2.7 T_n. The high value of pre-pulse noise is observed for the lower shock-pulse duration (≤ 0.5 ms), and the noise level (peak-to-peak) gets substantially minimized only when T ≥ 27 T_n.

在这项工作中，研究了在机械冲击下z轴差分电容MEMS加速度计结构的响应。加速度计的谐振频率为9.12 kHz，相应的时间段（T _n）为0.11毫秒。在30 g不同持续时间（0.1–4 ms）的半正弦加速度冲击下的加速度计结构的仿真显示，当脉冲持续时间（T）≥0.9 ms时，输出幅度达到输入加速度冲击值。发现在输入脉冲上的模拟输出时滞约为0.2±0.03毫秒。加速度计在0.1-0.5 ms的冲击脉冲持续时间内显示出较高的上升时间（10-90％）和下降时间（90-10％）。绝缘体上硅（SOI）MEMS技术用于制造加速度计结构。封装的加速度计在电动振动筛产生的30 g半正弦加速度冲击下进行了测试。当冲击脉冲持续时间（T）≥9T _n时，测得的加速度计输出幅度达到输入加速度值，并且测量的时滞在0.05到0.3毫秒之间变化。测量结果表明，当上升时间（t _r）≥T _n且下降时间（t _f）≥2.7 T _n时，输出跟随输入冲击脉冲。对于较低的冲击脉冲持续时间（≤0.5 ms），可以观察到较高的脉冲前噪声值，并且仅当T≥27 T _n时，噪声水平（峰峰值）才基本降至最低。