A tunable resonant multiband transmit/receive (T/R) switch is proposed and fabricated in 45-nm silicon on insulator (SOI) CMOS to cover the frequency band from 24 to 47 GHz allocated for 5G mobile communication systems. For the Tx path, the measured insertion loss is 0.85 and 0.8 dB at 28 and 39 GHz, respectively. The OP1dB is 22 and 28.5 dBm at 28 and 39 GHz, respectively. The OIP3 is 40 and 41 dBm at 28 and 39 GHz, respectively. For the Rx path, the measured insertion loss is 1.2 and 1.05 dB at 28 and 39 GHz, respectively. The OP1dB is 13.5 and 14.5 dBm at 28 and 39 GHz, respectively. The OIP3 is 27.5 and 29 dBm at 28 and 39 GHz, respectively. The core area without pads is 0.05 mm ² .

中文翻译：

---

一个24–47 GHz谐振多频带T / R开关

提出了可调谐谐振多频带发射/接收（T / R）开关，并在45 nm绝缘体上硅（SOI）CMOS上制造了该开关，以覆盖分配给5G移动通信系统的24至47 GHz频带。对于Tx路径，在28 GHz和39 GHz时测得的插入损耗分别为0.85和0.8 dB。在28 GHz和39 GHz时，OP1dB分别为22和28.5 dBm。OIP3在28 GHz和39 GHz时分别为40 dBm和41 dBm。对于Rx路径，在28 GHz和39 GHz时测得的插入损耗分别为1.2和1.05 dB。在28 GHz和39 GHz时，OP1dB分别为13.5 dBm和14.5 dBm。OIP3在28 GHz和39 GHz时分别为27.5和29 dBm。不带垫片的芯线面积为0.05 mm ² 。