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Watt-Level 21–25-GHz Integrated Doherty Power Amplifier in GaAs Technology
IEEE Microwave and Wireless Components Letters ( IF 2.9 ) Pub Date : 2021-03-29 , DOI: 10.1109/lmwc.2021.3069555
Chiara Ramella , Vittorio Camarchia , Anna Piacibello , Marco Pirola , Roberto Quaglia

This letter presents the design and characterization of a Doherty power amplifier for K-band applications based on the GaAs 150-nm pseudomorphic HEMT (pHEMT) technology of Qorvo. For the output power combiner, a wideband design approach, based on embedding the output capacitance of the active devices in the combiner, is applied. A state-of-the-art bandwidth of 4 GHz is achieved: in the 21–25-GHz range, the output power is above 29.5 dBm, with an associated power added efficiency (PAE) higher than 30%. At 6-dB output back-off, the PAE is above 19% while the corresponding gain is higher than 10 dB.

中文翻译:

GaAs技术的瓦特级21–25 GHz集成Doherty功率放大器

这封信介绍了基于Qorvo的GaAs 150 nm伪晶HEMT(pHEMT)技术的,用于K波段应用的Doherty功率放大器的设计和特性。对于输出功率组合器,采用了基于将有源器件的输出电容嵌入组合器的宽带设计方法。达到了最新的4 GHz带宽:在21–25 GHz范围内,输出功率高于29.5 dBm,并且相关的功率附加效率(PAE)高于30%。在6 dB输出退避时,PAE高于19%,而相应的增益高于10 dB。
更新日期:2021-05-11
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