This letter presents the design and characterization of a Doherty power amplifier for K-band applications based on the GaAs 150-nm pseudomorphic HEMT (pHEMT) technology of Qorvo. For the output power combiner, a wideband design approach, based on embedding the output capacitance of the active devices in the combiner, is applied. A state-of-the-art bandwidth of 4 GHz is achieved: in the 21–25-GHz range, the output power is above 29.5 dBm, with an associated power added efficiency (PAE) higher than 30%. At 6-dB output back-off, the PAE is above 19% while the corresponding gain is higher than 10 dB.

中文翻译：

---

GaAs技术的瓦特级21–25 GHz集成Doherty功率放大器

这封信介绍了基于Qorvo的GaAs 150 nm伪晶HEMT（pHEMT）技术的，用于K波段应用的Doherty功率放大器的设计和特性。对于输出功率组合器，采用了基于将有源器件的输出电容嵌入组合器的宽带设计方法。达到了最新的4 GHz带宽：在21–25 GHz范围内，输出功率高于29.5 dBm，并且相关的功率附加效率（PAE）高于30％。在6 dB输出退避时，PAE高于19％，而相应的增益高于10 dB。