Two new compounds Bi₂GdZrVO₉ and Bi₂DyZrVO₉ of the Aurivillius family having two pseudo perovskite units per cell are processed by the solid-state reaction method. The effect of the lanthanides at the A-site and a combination of transition elements at the B-site of the bismuth layer structured compounds are discussed in detail. The Nyquist plots confirm the contribution of only grain to the polarization mechanism, and thus the depression angle was obtained to estimate its deviation from the Debye behavior. The activation energy estimated for the relaxation process, conduction process, and the grain resistance suggests the involvement of ionization of oxygen vacancy in these processes. The dielectric properties of both the samples were studied in detail and found to have better values as compared to those of the other members of the bismuth layer family. The conductivity analysis using Jonscher's power law is employed to ascertain the conduction mechanism in the samples.

两种新化合物Bi ₂ GdZrVO ₉和Bi ₂ DyZrVO ₉通过固态反应方法处理每个细胞具有两个假钙钛矿单元的Auririvillius家族的α-淀粉。详细讨论了镧系元素在铋层结构化合物的A位和B位过渡元素结合的影响。奈奎斯特图证实了仅晶粒对极化机理的贡献，因此获得了俯角以估计其与德拜行为的偏差。估计的弛豫过程，传导过程和晶粒电阻的活化能表明这些过程中氧空位的电离作用。对两个样品的介电性能进行了详细研究，发现与铋层族的其他成员相比具有更好的值。