The photodetector with superlattice electron barrier has received great attention in the past few years. In this paper, a type of photodetector with superlattice structure is simulated. InGaAs/InAs superlattices are inserted into the intrinsic layer of the PIN structure, and the positions of the superlattices are optimized. After changing the position of the superlattice, the dark current was reduced from 6.42 × 10⁻⁵ A/cm² to 3.02 × 10⁻⁵ A/cm². The results show that placing the superlattice on top of the intrinsic layer can minimize the dark current of the photodetector. Similarly, after changing the number of superlattice layers, the dark current is reduced from 6.42 × 10⁻⁵ A/cm² to 1.55 × 10⁻⁵ A/cm². In addition, the thickness of the superlattice was optimized, and the dark current was reduced from 6.42 × 10⁻⁵ A/cm² to 3.1 × 10⁻⁵ A/cm².

具有超晶格电子势垒的光电探测器在过去几年中受到了极大的关注。本文模拟了一种具有超晶格结构的光电探测器。InGaAs/InAs超晶格插入PIN结构的本征层，优化超晶格的位置。改变超晶格位置后，暗电流从6.42×10 ^-5 A/cm ^{2 降低}到3.02×10 ^-5 A/cm ²。结果表明，将超晶格放置在本征层的顶部可以最小化光电探测器的暗电流。同样，改变超晶格层数后，暗电流从 6.42 × 10 ^-5 A/cm ^{2 降低}至 1.55 × 10 ^-5 A/cm ²。此外，优化了超晶格的厚度，暗电流从6.42×10 ^-5 A/cm ^{2 降低}到3.1×10 ^-5 A/cm ²。