The goal of this paper is to provide a comparative analysis of the thermal impact on the microwave performance of high electron-mobility transistors (HEMTs) based on GaAs and GaN technologies. To accomplish this challenging goal, the relative sensitivity of the microwave performance to changes in the ambient temperature is determined by using scattering parameter measurements and the corresponding equivalent-circuit models. The studied devices are two HEMTs with the same gate width of 200 µm but fabricated using different semiconductor materials: GaAs and GaN technologies. The investigation is performed under both cooled and heated conditions, by varying the temperature from −40 °C to 150 °C. Although the impact of the temperature strongly depends on the selected operating condition, the bias point is chosen in order to enable, as much as possible, a fair comparison between the two different technologies. As will be shown, quite similar trends are observed for the two different technologies, but the impact of the temperature is more pronounced in the GaN device.

中文翻译：

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两种微波HEMT器件的温度敏感性：AlGaAs / GaAs与AlGaN / GaN异质结构

本文的目的是对基于GaAs和GaN技术的高电子迁移率晶体管（HEMT）的微波性能的热影响进行比较分析。为了实现这一具有挑战性的目标，可通过使用散射参数测量和相应的等效电路模型来确定微波性能对环境温度变化的相对灵敏度。所研究的器件是两个HEMT，栅极宽度相同，均为200 µm，但使用不同的半导体材料制造：GaAs和GaN技术。通过在-40°C至150°C的温度范围内进行冷却和加热条件下的研究。尽管温度的影响很大程度上取决于所选的工作条件，但选择偏置点是为了尽可能使 两种不同技术之间的公平比较。如将显示的那样，对于两种不同的技术观察到了非常相似的趋势，但是温度的影响在GaN器件中更为明显。