The drain current of the amorphous InGaZnO thin-film transistors (TFTs) shows the Arrhenius and the non-Arrhenius dependence at the high temperature and the low temperature respectively. The gate-voltage-dependent effective temperature is introduced into the Arrhenius equation. Considering the normal Meyer-Neldel (MN) rule and the inverse MN rule, the equation successfully describes both the Arrhenius and the non-Arrhenius dependent drain current at the low and the high gate voltage. The calculated results of the equation are verified by the available experimental data of the amorphous La-doped InZnO TFT and the amorphous InGaZnO (InO₃:Ga₂O₃:ZnO = 1:1:1 mol%) TFT.

非晶InGaZnO薄膜晶体管（TFT）的漏极电流分别显示了高温和低温下的阿里尼乌斯和非阿里尼乌斯依赖性。与栅极电压相关的有效温度被引入到Arrhenius方程中。考虑正常的Meyer-Neldel（MN）规则和MN逆规则，该方程式成功地描述了低栅极电压和高栅极电压下依赖于Arrhenius和非Arrhenius的漏极电流。由非晶La掺杂的InZnO TFT和非晶InGaZnO（InO ₃：Ga ₂ O ₃：ZnO ＝ 1∶1∶1mol％）TFT的可用实验数据验证了该方程的计算结果。