We form carbon-doped n-BaSi₂(0.35 μm)/p-Si(111) heterojunction diodes by radio-frequency sputtering using BaSi₂ and SiC targets, and demonstrate the solar cell operation for the first time under AM1.5 illumination. The electron trap level was measured to be 0.21eV below the conduction band edge of the n-BaSi₂ layers by deep-level transient spectroscopy. The shunt resistance reflecting the quality of the heterointerface exceeds 0.7 MΩ, one order of magnitude higher than that obtained for the same structure grown by molecular beam epitaxy. The carrier transport properties are discussed based on the external quantum efficiency spectrum and the band alignment.

我们使用 BaSi ₂和 SiC 靶材通过射频溅射形成碳掺杂的 n-BaSi ₂ (0.35 μ m)/p-Si(111) 异质结二极管，并首次在 AM1.5 照明下演示太阳能电池的运行. 通过深能级瞬态光谱测量电子陷阱能级低于 n-BaSi ₂层的导带边缘 0.21eV 。反映异质界面质量的分流电阻超过 0.7 MΩ，比通过分子束外延生长的相同结构获得的分流电阻高一个数量级。基于外部量子效率谱和能带排列讨论了载流子传输特性。