In this paper, InGaAs p-i-n photodetectors (PDs) on an InP/SiO₂/Si (InPOI) substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate. The quality of epitaxial layers on the InPOI substrate is similar to that on the InP substrate. The photo responsivities of both devices measured at 1.55 µm are comparable, which are about 0.808–0.828 A W⁻¹. Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K, the peak detectivities of both PDs are comparable. In general, the overall performance of the InPOI-based PD is comparable to the InP-based PD, demonstrating that the ion-slicing technology is a promising route to enable the high-quality Si-based InP platform for the full photonic integration on a Si substrate.

在本文中，通过离子切片技术制造的InP / SiO ₂ / Si（InPOI）衬底上的InGaAs pin光电探测器（PDs）进行了演示，并与商用InP衬底上的相同器件进行了比较。InPOI衬底上的外延层的质量类似于InP衬底上的外延层的质量。在1.55 µm处测得的两种器件的光敏度可比，大约为0.808–0.828 AW ^-1。尽管在300 K时InPOI基板上PD的暗电流是InP基板上PD的暗电流的两倍，但两个PD的峰值检出率是可比的。通常，基于InPOI的PD的总体性能可与基于InP的PD媲美，这表明离子切片技术是使高质量的基于Si的InP平台实现在光子上的完整光子集成的有前途的途径。硅衬底。