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Wide Input Dynamic Range Fully Integrated Capacitive Sensor for Life Science Applications.
IEEE Transactions on Biomedical Circuits and Systems ( IF 3.8 ) Pub Date : 2021-04-23 , DOI: 10.1109/tbcas.2021.3075348
Hamed Osouli Tabrizi , Omid Farhanieh , Qiao Owen , Sebastian Magierowski , Ebrahim Ghafar-Zadeh

This paper presents a new fully integrated CMOS capacitance sensor chip with a wider input dynamic range compared to the state-of-the-art, suitable for a variety of life science applications. With the novel differential capacitance to current conversion topology, it achieves an IDR of about seven times higher compared to previous charge based capacitive measurement circuits and more than three times compared to the CBCM with cascode current. It also features a calibration circuitry consisting of an array of switched capacitors, interdigitated electrodes (IDEs) realized on the topmost metal layer, a current-controlled 300 MHz oscillator, and a counter-serializer to create digital output. The proposed sensor, fabricated in AMS 0.35 m CMOS technology, enables a high-resolution measurement, equal to 416 aF, of physiochemical changes in the IDE with up to 1.27 pF input offset adjustment range (IOAR). With a measurement speed of 15 s, this sensor is among the fast CMOS capacitive sensors in the literature. In this paper, we demonstrate its functionality and applicability and present the experimental results for monitoring 2 L evaporating droplets of chemical solvents. By using samples of solvents with different conductivity and relative permittivity, a wide range of capacitance and resistance variations in the sample-IDE interface electric equivalent model can be created. In addition, the evaporating droplet test has inherently fast dynamic changes. Based on the results, our proposed device addresses the challenge of detecting small capacitance changes despite large parasitic elements caused by ions in the solution or remnants deposited on the electrode.

中文翻译:

适用于生命科学应用的宽输入动态范围全集成电容式传感器。

与现有技术相比,本文提出了一种新型的全集成CMOS电容传感器芯片,其输入动态范围更广,适用于多种生命科学应用。借助新颖的差分电容到电流转换拓扑,与以前的基于电荷的电容测量电路相比,它的IDR大约高出七倍,而与共源共栅电流的CBCM相比,它的IDR则高出三倍以上。它还具有一个校准电路,该校准电路由一组开关电容器,在最顶层金属层上实现的叉指电极(IDE),一个电流控制的300 MHz振荡器以及一个可产生数字输出的反串行器组成。拟议中的传感器采用AMS 0.35 m CMOS技术制造,可实现等于416 aF的高分辨率测量,高达1.27 pF的输入失调调整范围(IOAR),可以了解IDE中的物理化学变化。该传感器的测量速度为15 s,是文献中快速CMOS电容式传感器之一。在本文中,我们展示了其功能性和适用性,并给出了监测2 L蒸发化学溶剂液滴的实验结果。通过使用具有不同电导率和相对介电常数的溶剂样品,可以在样品-IDE界面电当量模型中创建宽范围的电容和电阻变化。此外,蒸发液滴测试本质上具有快速的动态变化。根据结果​​,
更新日期:2021-04-23
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