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High-Power Gallium Nitride HIFU Transmitter With Integrated Real-Time Current and Voltage Measurement
IEEE Transactions on Biomedical Circuits and Systems ( IF 3.8 ) Pub Date : 2021-03-22 , DOI: 10.1109/tbcas.2021.3067842
Thomas M Carpenter , David M J Cowell , Harry R Clegg , James R McLaughlan , Steven Freear

High-Intensity Focused Ultrasound (HIFU) therapy provides a non-invasive technique with which to destroy cancerous tissue without using ionizing radiation. To drive large single-element High-Intensity Focused Ultrasound (HIFU) transducers, ultrasound transmitters capable of delivering high powers at relevant frequencies are required. The acoustic power delivered to a transducers focal region will determine the treated area, and due to safety concerns and intervening layers of attenuation, control of this output power is critical. A typical setup involves large inefficient linear power amplifiers to drive the transducer. Switched mode transmitters allow for a more compact drive system with higher efficiencies, with multi-level transmitters allowing control over the output power. Real-time monitoring of power delivered can avoid damage to the transducer and injury to patients due to over treatment, and allow for precise control over the output power. This study demonstrates a transformer-less, high power, switched mode transmit transmitter based on Gallium-Nitride (GaN) transistors that is capable of delivering peak powers up to 1.8 kW at up to 600 Vpp, while operating at frequencies from DC to 5 MHz. The design includes a 12 b 16 MHz floating Current/Voltage (IV) measurement circuit to allow real-time high-side monitoring of the power delivered to the transducer allowing use with multi-element transducers.

中文翻译:

具有集成实时电流和电压测量功能的高功率氮化镓 HIFU 发射器

高强度聚焦超声 (HIFU) 疗法提供了一种非侵入性技术,可在不使用电离辐射的情况下破坏癌组织。为了驱动大型单晶高强度聚焦超声 (HIFU) 换能器,需要能够在相关频率下提供高功率的超声发射器。传递到换能器焦点区域的声功率将决定治疗区域,并且由于安全问题和中间衰减层,此输出功率的控制至关重要。典型的设置包括使用大型低效线性功率放大器来驱动换能器。开关模式变送器可实现更紧凑、效率更高的驱动系统,多电平变送器可控制输出功率。实时监测输出功率,可避免因过度治疗而损坏换能器和对患者造成伤害,并可精确控制输出功率。本研究展示了一种基于氮化镓 (GaN) 晶体管的无变压器、高功率、开关模式发射器,能够在高达 600 Vpp 的情况下提供高达 1.8 kW 的峰值功率,同时在 DC 至 5 MHz 的频率下运行. 该设计包括一个 12 b 16 MHz 浮动电流/电压 (IV) 测量电路,以允许对输送到换能器的功率进行实时高侧监控,从而允许与多元件换能器一起使用。基于氮化镓 (GaN) 晶体管的开关模式发射器,能够在高达 600 Vpp 的情况下提供高达 1.8 kW 的峰值功率,同时在 DC 至 5 MHz 的频率下运行。该设计包括一个 12 b 16 MHz 浮动电流/电压 (IV) 测量电路,以允许对输送到换能器的功率进行实时高侧监控,从而允许与多元件换能器一起使用。基于氮化镓 (GaN) 晶体管的开关模式发射器,能够在高达 600 Vpp 的情况下提供高达 1.8 kW 的峰值功率,同时在 DC 至 5 MHz 的频率下运行。该设计包括一个 12 b 16 MHz 浮动电流/电压 (IV) 测量电路,以允许对输送到换能器的功率进行实时高侧监控,从而允许与多元件换能器一起使用。
更新日期:2021-05-28
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