Plasmonic generation of hot carriers in metallic nanostructures has attracted much attention due to its great potential in several applications. However, it is highly debated whether the enhancement is due to the hot carriers or the thermal effect. Here, the ability to exclude the thermal effect and detect the generation of non-thermal hot carriers by surface plasmon is demonstrated using an AlGaN/GaN high-electron-mobility transistor. This ultrasensitive platform, which demonstrates at least two orders of magnitude more sensitivity compared to the previous reports, can detect the hot carriers generated from discrete nanostructures illuminated by a continuous wave light. The quantitative measurements of hot carrier generation also open a new way to optimize the plasmonic nanoantenna design in many applications.

中文翻译：

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使用 AlGaN/GaN 高电子迁移率晶体管量化非热载流子的等离子体生成率

由于其在多种应用中的巨大潜力，金属纳米结构中热载流子的等离子体产生引起了很多关注。然而，增强是由于热载流子还是热效应引起的争议很大。在这里，使用 AlGaN/GaN 高电子迁移率晶体管证明了排除热效应并检测表面等离子体激元产生的非热热载流子的能力。与之前的报告相比，这种超灵敏平台的灵敏度至少提高了两个数量级，可以检测由连续波光照射的离散纳米结构产生的热载流子。热载流子生成的定量测量也为在许多应用中优化等离子体纳米天线设计开辟了一条新途径。