Heterovalent structures consisting of group II-VI/group III-V compound semiconductors offer attractive properties, such as a very broad range of bandgaps, large conduction band offsets, high electron and hole mobilities, and quantum-material properties such as electric-field-induced topological insulator states. These properties and characteristics are highly desirable for many electronic and optoelectronic devices as well as potential condensed-matter quantum-physics applications. Here, we provide an overview of our recent studies of the MBE growth and characterization of zincblende II-VI/III-V heterostructures as well as several novel device applications based on different sets of these materials. By combining materials with small lattice mismatch, such as ZnTe/GaSb (Δa/a ∼ 0.13%), CdTe/InSb (Δa/a ∼ 0.05%), and ZnSe/GaAs (Δa/a ∼ 0.26%), epitaxial films of excellent crystallinity were grown once the growth conditions had been optimized. Cross-sectional observations using conventional and atomic-resolution electron microscopy revealed coherent interfaces and close to defect-free heterostructures. Measurements across CdTe/InSb interfaces indicated a limited amount (∼1.5 nm) of chemical intermixing. Results for ZnTe/GaSb distributed Bragg reflectors, CdTe/Mg_xCd_1−xTe double heterostructures, and CdTe/InSb two-color photodetectors are briefly presented, and the growth of a rock salt/zincblende PbTe/CdTe/InSb heterostructure is also described.

中文翻译：

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通过分子束外延生长的异质半导体结构和器件

由II-VI / III-V族化合物半导体组成的异价结构具有诱人的特性，例如非常宽的带隙范围，大的导带偏移，高的电子和空穴迁移率以及量子材料的特性（例如电场强度）。诱导拓扑绝缘体状态。对于许多电子和光电设备以及潜在的凝聚态量子物理学应用，这些特性和特性是非常需要的。在这里，我们提供了我们最近对MBE生长和闪锌矿II-VI / III-V异质结构表征以及基于这些材料的不同组的几种新型器件应用的研究的概述。通过材料具有小的晶格失配，诸如的ZnTe /锑化镓（Δ组合一/一个 〜0.13％），碲化镉/ InSb的（Δ一/一个 〜0.05％）和ZnSe /砷化镓（Δ一/一个 〜0.26％），良好的结晶性的外延膜，一旦生长条件进行了优化生长。使用常规和原子分辨率电子显微镜进行的横截面观察显示出相干的界面和接近无缺陷的异质结构。跨CdTe / InSb界面的测量结果表明，化学混合的数量有限（约1.5 nm）。简要介绍了ZnTe / GaSb分布布拉格反射器，CdTe / Mg _x Cd _1-x Te双异质结构和CdTe / InSb两色光电探测器的结果，并且还显示了盐/锌闪锌矿PbTe / CdTe / InSb异质结构的生长描述。