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Phosphites as precursors in atomic layer deposition thin film synthesis
Journal of Vacuum Science & Technology A ( IF 2.4 ) Pub Date : 2021-03-08 , DOI: 10.1116/6.0000844
Kristian B. Kvamme 1 , Amund Ruud 1 , Kristian Weibye 1 , Timo Sajavaara 2 , Ola Nilsen 1
Affiliation  

We here demonstrate a new route for deposition of phosphorous based materials by atomic layer deposition (ALD) using the phosphites Me3PO3 or Et3PO3 as precursors. These contain phosphorous in the oxidation state (III) and are open for deposition of reduced phases by ALD. We have investigated their applicability for the synthesis of LiPO and AlPO materials and characterized their growth by means of in situ quartz crystal microbalance. Phosphites are good alternatives to the established phosphate-based synthesis routes as they have high vapor pressure and are compatible with water as a coreactant during deposition. The deposited materials have been characterized using XPS, x-ray fluorescence, and ion beam analysis for composition analysis, spectroscopic ellipsometry for thickness, and FTIR for local structure.

中文翻译:

亚磷酸酯作为原子层沉积薄膜合成中的前体

我们在这里展示了一种新的路线,该路线使用亚磷酸酯Me 3 PO 3或Et 3 PO 3作为前体,通过原子层沉积(ALD)沉积磷基材料。它们含有处于氧化态(III)的磷,并开放用于通过ALD沉积还原相。我们已经研究了它们在合成LiPO和AlPO材料中的适用性,并通过原位表征了它们的生长石英晶体微量天平。亚磷酸酯是已建立的基于磷酸盐的合成路线的良好替代品,因为它们具有高蒸气压,并且在沉积过程中与水作为共反应剂相容。使用XPS,X射线荧光和离子束分析进行成分分析,光谱椭圆率法测量厚度,并使用FTIR进行局部结构,对沉积的材料进行了表征。
更新日期:2021-05-07
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