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Atomic layer deposition of sodium fluoride thin films
Journal of Vacuum Science & Technology A ( IF 2.9 ) Pub Date : 2021-03-09 , DOI: 10.1116/6.0000847
Sara Kuraitis 1 , Donghyeon Kang 2 , Anil U. Mane 2 , Hua Zhou 3 , Jake Soares 1 , Jeffrey W. Elam 2 , Elton Graugnard 1
Affiliation  

The need for advanced energy conversion and storage devices remains a critical challenge amid the growing worldwide demand for renewable energy. Metal fluoride thin films are of great interest for applications in lithium-ion and emerging rechargeable battery technologies, particularly for enhancing the stability of the electrode-electrolyte interface and thereby extending battery cyclability and lifetime. Reported within, sodium fluoride (NaF) thin films were synthesized via atomic layer deposition. NaF growth experiments were carried out at reactor temperatures between 175 and 250 °C using sodium tert-butoxide and HF-pyridine solution. The optimal deposition temperature range was 175–200 °C, and the resulting NaF films exhibited low roughness (Rq ≈ 1.6 nm for films of ∼8.5 nm), nearly stoichiometric composition (Na:F = 1:1.05) and a growth per cycle value of 0.85 Å/cycle on SiO2 substrates. These results are encouraging for future applications of NaF thin films in the development of improved energy capture and storage technologies.

中文翻译:

氟化钠薄膜的原子层沉积

在全球对可再生能源的需求不断增长的情况下,对先进的能量转换和存储设备的需求仍然是一个严峻的挑战。金属氟化物薄膜对于锂离子和新兴的可再充电电池技术中的应用特别感兴趣,特别是对于增强电极-电解质界面的稳定性,从而延长电池的可循环性和使用寿命。据报道,氟化钠(NaF)薄膜是通过原子层沉积合成的。使用丁醇钠和HF-吡啶溶液在175至250°C的反应器温度下进行NaF生长实验。最佳沉积温度范围为175–200°C,所得的NaF膜显示出较低的粗糙度(R q 对于约8.5 nm的薄膜,其≈≈1.6 nm),接近化学计量的组成(Na:F = 1:1.05)和在SiO 2衬底上每循环的增长值为0.85Å/循环。这些结果对于发展改进的能量捕获和存储技术的未来NaF薄膜的应用是令人鼓舞的。
更新日期:2021-05-07
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