Eight new atomic layer deposition (ALD) precursors were synthesized using a ligand that is new to the field of ALD: (^tBuNH)SiMe₂NMe₂. Complexes containing Mg, V, Mn, Fe, Co, Ni, and Zn were found to be tetrahedral, and Li complexes form more complex structures. These compounds performed exceptionally well by thermogravimetric analysis (TGA). All compounds except for one Li species and the Fe complex left residual masses below 5%, similar or better than the analogous amidinate complexes. In particular, the Co(II) complex is very thermally robust and performs very well during a TGA stress test, surpassing temperatures above 200 °C. These compounds are the first of a family of precursors containing this type of monoanionic N–Si–N ligand and are prime candidates for ALD process development.

中文翻译：

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（tBuN）SiMe2NMe2-用于原子层沉积前体的新型N，N'-κ2-单阴离子配体

八种新的原子层沉积（ALD）前体是使用ALD领域的新配体合成的：（^t BuNH）SiMe ₂ NMe ₂。发现含有Mg，V，Mn，Fe，Co，Ni和Zn的配合物为四面体，而Li配合物形成更复杂的结构。这些化合物通过热重分析（TGA）表现出色。除一种Li种类和Fe络合物外，所有化合物的残留质量均低于5％，与类似的a基络合物相似或更好。特别是，Co（II）络合物具有非常强的热稳定性，并且在TGA应力测试期间的性能非常好，超过了200°C以上的温度。这些化合物是包含这种单阴离子N–Si–N配体的前体家族中的第一个，并且是ALD工艺开发的主要候选化合物。