The Schottky barriers of Ti, Mo, Co, Ni, Pd, and Au on (100) β-Ga₂O₃ substrates were analyzed using a combination of current-voltage (J-V), capacitance-voltage (C-V), and current-voltage-temperature (J-V-T) measurements. Near-ideal, average ideality factors for Ti, Mo, Co, and Ni were 1.05–1.15, whereas higher ideality factors (∼1.3) were observed for Pd and Au contacts. Barrier heights ranging from 0.60 to 1.20 eV were calculated from J-V measurements for the metals with low ideality factors. C-V measurements of all Schottky metals were conducted and yielded average barrier heights ranging from 0.78 to 1.98 eV. J-V-T measurements of Ti and Co diodes yielded barrier heights of 0.81 and 1.35 eV, respectively. The results reveal a strong positive correlation between the calculated Schottky barrier heights and the metal work functions: the index of interface behavior, S = 0.70, 0.97, and 0.81 for J-V, C-V, and J-V-T data, respectively.

中文翻译：

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金属接触对（100）β-Ga2O3肖特基势垒的影响

钛，钼，钴，镍，钯，和Au的上（100）的β-Ga肖特基势垒₂ ö ₃使用电流-电压（JV），电容-电压（CV）和电流-电压-温度（JVT）测量的组合对基板进行了分析。Ti，Mo，Co和Ni的接近理想的平均理想因子为1.05-1.15，而Pd和Au接触的理想因子更高（〜1.3）。通过对低理想因子的金属进行JV测量，可以计算出0.60至1.20 eV的势垒高度。进行了所有肖特基金属的CV测量，得出的平均势垒高度范围为0.78至1.98 eV。Ti和Co二极管的JVT测量分别得出势垒高度为0.81和1.35 eV。结果表明，所计算的肖特基势垒高度与金属功函数之间具有很强的正相关性：界面行为的指数，对于合资，CV，S = 0.70、0.97和0.81，