Historically, dynamic secondary ion mass spectroscopy (D-SIMS) has been used to quantitatively monitor the depth distribution of species present in low concentrations in samples/devices. We are not aware of any manuscript that describes the use of time of flight–secondary ion mass spectroscopy (ToF-SIMS) to perform quantitative analysis of aluminum present at low concentrations in silicon carbide (SiC) wafer substrates. In this paper, we will show that ToF-SIMS is able to replicate D-SIMS analysis. However, analysis at the lowest concentrations requires the collection of more spectral images at each depth. Tables of sputtering rates and sputtering yields, in addition to relative sensitivity factors are provided. We also highlight the benefits of ToF-SIMS analysis.

中文翻译：

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使用飞行时间二次离子质谱法对SiC中的Al进行定量深度分析

历史上，动态二次离子质谱法（D-SIMS）已用于定量监测样品/设备中低浓度物质的深度分布。我们没有发现任何描述飞行时间二次离子质谱（ToF-SIMS）的手稿，用于对碳化硅（SiC）晶圆基板中低浓度铝进行定量分析的手稿。在本文中，我们将证明ToF-SIMS能够复制D-SIMS分析。但是，以最低浓度进行分析需要在每个深度收集更多的光谱图像。除了相对灵敏度因子之外，还提供了溅射速率和溅射产率的表。我们还强调了ToF-SIMS分析的好处。