The design, growth, and characterizations of ZnCdSe/ZnCdMgSe semiconductor multilayer quantum-well structures for two-color quantum-well infrared photodetectors (QWIPs) are reported. The energy band and quantum well states are computed in a ZnCdSe/ZnCdMgSe single quantum well for both infrared detection regions. The sample has been grown in a multichamber molecular beam epitaxy system. The good crystalline quality of sample and its lattice matching to the InP substrate are investigated by high-resolution x-ray diffraction and transmission electron microscopy analysis. These structural measurements also confirm the good agreement between the design and the grown structure. The band-to-band and interband transition energies are experimentally determined by photoluminescence and contactless electroreflectance, respectively. The intersubband absorption spectra are investigated by Fourier transform infrared spectroscopy at room temperature. This multilayer structure represents a significant technological validation of the capabilities and potential of InP-based II-VI materials for engineering two-color QWIP devices. This paper provides a detailed methodology for the growth and in-depth characterization of such a complex high precision multilayered structure.

中文翻译：

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用于双色量子阱红外光电探测器应用的II-VI半导体多层量子阱结构的生长和表征

报道了用于双色量子阱红外光电探测器（QWIP）的ZnCdSe / ZnCdMgSe半导体多层量子阱结构的设计，生长和表征。在两个红外检测区域的ZnCdSe / ZnCdMgSe单量子阱中计算能带和量子阱态。样品已在多腔分子束外延系统中生长。通过高分辨率x射线衍射和透射电子显微镜分析，研究了样品的良好晶体质量及其与InP衬底的晶格匹配。这些结构测量结果也证实了设计与增长的结构之间的良好一致性。带间和带间跃迁能分别通过光致发光和非接触电反射率实验确定。在室温下通过傅里叶变换红外光谱法研究子带间吸收光谱。这种多层结构代表了对基于InP的II-VI材料用于双色QWIP器件工程的能力和潜力的重大技术验证。本文为这种复杂的高精度多层结构的生长和深度表征提供了详细的方法。