Layered van der Waals (vdW) materials grown by physical vapor deposition techniques are generally assumed to have a weak interaction with the substrate during growth. This leads to films with relatively small domains that are usually triangular and a terraced morphology. In this paper, we demonstrate that Bi₂Se₃, a prototypical vdW material, will form a nanocolumn morphology when grown on GaAs(001) substrates. This morphology is explained by a relatively strong film/substrate interaction, long adatom diffusion lengths, and a high reactive selenium flux. This discovery paves the way toward the growth of self-assembled vdW structures even in the absence of strain.

中文翻译：

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通过分子束外延生长在Bi2Se3中的自组装纳米柱

通常假定通过物理气相沉积技术生长的分层范德华（vdW）材料在生长过程中与基材的相互作用较弱。这导致电影具有相对较小的区域，通常为三角形和梯形形态。在本文中，我们证明了典型的vdW材料Bi ₂ Se ₃在GaAs（001）衬底上生长时将形成纳米柱形态。这种形态可以通过相对强的膜/底物相互作用，长的原子扩散长度和高的反应性硒通量来解释。该发现为即使在没有应变的情况下自组装vdW结构的生长铺平了道路。