α-Ga₂O₃, with an ultra-high energy bandgap of 5.1 eV, is an attractive material for applications in solar-blind photodetectors and high-power electronics. We fabricated an α-Ga₂O₃ metal-semiconductor-metal (MSM) interdigitated solar-blind photodetector, where an epitaxial α-Ga₂O₃ thin film was grown on a sapphire substrate using a hydride vapor-phase epitaxy technique. Excellent optoelectronic device properties including high responsivity (4.24 × 10⁴ A/W), detectivity (1.77 × 10¹¹ Jones), and external quantum efficiency (2.07 × 10⁵) were demonstrated in response to ultraviolet (UV) C wavelength. Under sunlight, the α-Ga₂O₃ MSM photodetector exhibited stable solar-blind sensitivity to UVC wavelength without interference from the incoming solar spectrum. Our work proposes that α-Ga₂O₃ has great potential as a next-generation high-performance solar-blind photodetector.

中文翻译：

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基于α-Ga2O3的高响应性日盲金属半导体金属光电探测器

α -镓₂ ö ₃，具有5.1电子伏特的超高能带隙，是用于太阳能盲光电检测器和高功率电子应用有吸引力的材料。我们制造的α-嘎₂ ö ₃金属-半导体-金属（MSM）相互交叉的太阳能盲光电检测器，其中，外延α -镓₂ ö ₃薄膜是使用氢化物气相外延法在蓝宝石衬底上生长。优异的光电器件性能，包括高响应度（4.24×10 ⁴  A / W），检测率（1.77×10 ¹¹  Jones）和外部量子效率（2.07×10 ^5）被证明是对紫外线（UV）C波长的响应。在阳光下，α-嘎₂ ö ₃ MSM光电探测器表现出对UVC波长稳定太阳能盲灵敏度而不从输入的太阳光谱的干扰。我们的工作提出了α-镓₂ ö ₃具有很大的潜力作为下一代高性能太阳能盲光电检测器。