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Imaging of Metal Ions and Nanoparticles on Structured Silicon Surface Using Laser Ablation-Inductively Coupled Plasma-Mass Spectrometer for Contamination Control in Semiconductor Manufacturing Process
IEEE Transactions on Semiconductor Manufacturing ( IF 2.3 ) Pub Date : 2021-03-10 , DOI: 10.1109/tsm.2021.3065075
H. B. Lim , Katherine McLachlin , Ciaran Orconnor , Daniel Wiederin , Hyuck Ki Hong

In this study, the imaging of metal ions and nanoparticles deposited on a structured silicon surface was investigated using a laser ablation-inductively coupled plasma-mass spectrometry (LA-ICP-MS). For application, 8 $\times $ 8 Petri-dish pillars, each with a diameter of 250 $\mu \text{m}$ and height of 300 $\mu \text{m}$ , were constructed on a silicon wafer. The etched pillar surface took a droplet of approximately 4.3 nL aqueous solution from a capillary tip through the surface-liquid attraction. The dissolved materials were found at the intersecting edge of pillar bottom after evaporation, and their positions were matched with the peaks of elements in the mass spectrum for imaging. Results suggest that the trace contaminants in the cleaning solution are gathered at the intersecting edges of the patterned wafer, and the multi-elemental images of the contaminants can be successfully obtained using LA-ICP-MS.

中文翻译:

在半导体制造过程中使用激光烧蚀-电感耦合等离子体质谱仪对结构化硅表面上的金属离子和纳米粒子成像,以控制污染

在这项研究中,使用激光烧蚀-电感耦合等离子体质谱法(LA-ICP-MS)研究了沉积在结构化硅表面上的金属离子和纳米粒子的成像。申请时,8 $ \次$ 8个培养皿支柱,每个支柱的直径为250 $ \ mu \ text {m} $ 和300的高度 $ \ mu \ text {m} $ ,被构造在硅晶片上。蚀刻后的柱子表面通过表面液体吸引作用从毛细管尖端吸取了约4.3 nL水溶液的液滴。蒸发后,在柱底的相交边缘发现了溶解的物质,其位置与质谱中元素的峰相匹配。结果表明,清洁溶液中的痕量污染物聚集在图案化晶圆的相交边缘,并且可以使用LA-ICP-MS成功获得污染物的多元素图像。
更新日期:2021-05-07
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