Aluminum nitride (AlN) is a semiconductor material with the wide band gap. The requirement of the substrate for the semiconductor device is no surface damage. In this paper, based on the principle of the hydration reaction of aluminum nitride, the single crystal aluminum nitride was polished under dry conditions and wet conditions using a sol-gel (SG) tool. The abrasive used in the SG polishing tool was diamond with a particle size of $5~{\mu }\text{m}$ . Surface morphology of single crystal aluminum nitride was observed by scanning electron microscopy (SEM). Surface damage to the polished single crystal aluminum nitride was detected by 3D optical surface profiler, and the wear debris were analyzed by high resolution transmission electron microscopy (TEM). The product of the hydration reaction remaining on the aluminum nitride surface after polishing was studied by X-ray photoelectron spectroscopy. The results demonstrate that the removal rate of single crystal aluminum nitride by wet polishing is higher than that of dry polishing. The final roughness Sa of workpiece by dry polishing is 1.8–2.2 nm, and the final roughness Sa of workpiece by wet polishing is 1.1–1.2 nm. In addition, wear debris of workpiece by two polishing methods are amorphous.

中文翻译：

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基于Sol-Gel抛光工具的单晶氮化铝低破坏性加工

氮化铝（AlN）是具有宽带隙的半导体材料。半导体器件用基板的要求是没有表面损伤。在本文中，基于氮化铝的水合反应原理，使用溶胶-凝胶（SG）工具在干燥和潮湿条件下对单晶氮化铝进行了抛光。SG抛光工具中使用的磨料为金刚石，粒度为 $ 5〜{\ mu} \ text {m} $ 。通过扫描电子显微镜（SEM）观察到单晶氮化铝的表面形态。通过3D光学表面轮廓仪检测抛光的单晶氮化铝的表面损伤，并通过高分辨率透射电子显微镜（TEM）分析磨损碎片。通过X射线光电子能谱研究了抛光后残留在氮化铝表面上的水合反应产物。结果表明，湿法抛光对单晶氮化铝的去除率高于干法抛光。干法抛光的工件的最终粗糙度Sa为1.8-2.2 nm，湿法抛光的工件的最终粗糙度Sa为1.1-1.2 nm。另外，通过两种抛光方法的工件的磨损碎片是非晶的。