In this article, a continuous-mode inverse class GF (CCGF ⁻¹ ) power amplifier is introduced based on a new closed-form expression for the drain current. This analytical expression is utilized to exploit second source harmonic impedance manipulation in order to expand the design space of the output matching circuit resistively. This approach allows to diminish the complexity of the design of the load matching network at the fundamental and harmonic frequencies and to achieve wider bandwidth while simultaneously improving drain efficiency across the new optimum admittance points. Using the nonlinear model of a commercially available 10-W gallium nitride (GaN) device, load—pull and source–pull techniques are used to design a wideband CCGF ⁻¹ . The designed amplifier is fabricated using the selected transistor in low-temperature co-fired ceramic (LTCC) technology. Measurement results show that, over the frequency band between 3.05 and 3.85 GHz, a drain efficiency of more than 70%, 11–12.4-dB gain, and 39.9–41.4-dBm output power at 3-dB gain compression have been achieved. Although not designed for linearity, the fabricated amplifier shows an adjacent channel power ratio better than 26 dBc under a 20-MHz long-term evolution (LTE) signal having a 10.45-dB peak-to-average power ratio.

中文翻译：

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器件输入具有二次谐波阻抗优化的连续模式反向GF类功率放大器

在本文中， 基于漏电流的新闭式表达式，介绍了一种连续模式反向GF类（CCGF ^-1）功率放大器。利用该分析表达式来利用二次源谐波阻抗控制，从而以电阻方式扩展输出匹配电路的设计空间。这种方法可以降低基频和谐波频率下负载匹配网络设计的复杂性，并实现更宽的带宽，同时在新的最佳导纳点上提高漏极效率。使用市售的10W氮化镓（GaN）器件的非线性模型，使用负载-牵引和源-牵引技术来设计宽带CCGF ^-1 。设计的放大器是使用低温共烧陶瓷（LTCC）技术中的选定晶体管制造的。测量结果表明，在3.05至3.85 GHz之间的频带上，在3-dB增益压缩下，漏极效率超过70％，增益为11–12.4 dB，输出功率为39.9–41.4 dBm。尽管不是为线性而设计的，但制造的放大器在峰均功率比为10.45 dB的20 MHz长期演进（LTE）信号下，其邻道功率比优于26 dBc。