1/f noise provides essential information on the interface trapping effect as well as the scattering mechanism in transistors. In this work, a systematic 1/f noise study has been carried out on the recessed-gate enhancement-mode (E-mode) GaN MOS-HEMTs under electrical and thermal stress together with the depletion-mode (D-mode) counterpart. Low-frequency (1–1000 Hz) measurement has been performed at room (25 °C) and elevated (100 °C) temperatures at different carrier densities at the drain bias of 2 V and 10 V. The results show the E-mode device has much better noise characteristics under high voltage and high temperature compared with the D-mode counterpart. Moreover, charge-noise model reveals that the improved noise behavior of the E-mode device at high density and high drain bias at 100 °C originating from the energy band alignment at high biases, where the D-mode device suffers from extra charge trapping scattering in the gate edge near the gate-to-drain access region.

中文翻译：

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在电和热应力作用下，改进的嵌入式门E型AlGaN / GaN MOS-HEMT的低频噪声

1 / f噪声提供了有关界面俘获效果以及晶体管中的散射机制的基本信息。在这项工作中，已经在电应力和热应力以及耗尽模式（D模式）下对凹栅增强模式（E模式）GaN MOS-HEMT进行了系统的1 / f噪声研究。在室温（25°C）和升高的温度（100°C）下，在2 V和10 V的漏极偏置下，在不同的载流子密度下进行了低频（1-1000 Hz）测量。结果显示了E模式与D-mode相比，该器件在高压和高温下具有更好的噪声特性。而且，