1/f noise provides essential information on the interface trapping effect as well as the scattering mechanism in transistors. In this work, a systematic 1/f noise study has been carried out on the recessed-gate enhancement-mode (E-mode) GaN MOS-HEMTs under electrical and thermal stress together with the depletion-mode (D-mode) counterpart. Low-frequency (1-1000 Hz) measurement has been performed at room (25 °C) and elevated (100 °C) temperatures at different carrier densities at the drain bias of 2 V and 10 V. The results show the E-mode device has much better noise characteristics under high voltage and high temperature compared with the D-mode counterpart. Moreover, charge-noise model reveals that the improved noise behavior of the E-mode device at high density and high drain bias at 100 °C originating from the energy band alignment at high biases, where the D-mode device suffers from extra charge trapping scattering in the gate edge near the gate-to-drain access region.

中文翻译：

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改善了凹栅 E 模式 AlGaN/GaN MOS-HEMT 在电应力和热应力下的低频噪声


1/f 噪声提供有关界面捕获效应以及晶体管中的散射机制的重要信息。在这项工作中，我们对凹栅增强模式（E 模式）GaN MOS-HEMT 以及耗尽模式（D 模式）对应物在电应力和热应力下进行了系统的 1/f 噪声研究。在不同载流子密度、漏极偏压为 2 V 和 10 V 的情况下，在室温 (25 °C) 和高温 (100 °C) 下进行了低频 (1-1000 Hz) 测量。结果显示 E 模式与 D 模式对应器件相比，器件在高电压和高温下具有更好的噪声特性。此外，电荷噪声模型表明，E 模式器件在 100 °C 下的高密度和高漏极偏压下噪声行为的改善源于高偏压下的能带排列，其中 D 模式器件遭受额外的电荷捕获靠近栅极到漏极访问区域的栅极边缘的散射。