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Practical demonstration of a RRAM memory fuse
International Journal of Circuit Theory and Applications ( IF 1.8 ) Pub Date : 2021-05-05 , DOI: 10.1002/cta.3010
Alexander Serb 1 , Ali Khiat 1 , Themis Prodromakis 1
Affiliation  

Since its inception, the resistive random access memory (RRAM) fuse has been a good example of how small numbers of RRAM devices can be combined to obtain useful behaviors unachievable by individual devices. In this work, we link the RRAM fuse concept with that of the complementary resistive switch (CRS), exploit that link to experimentally demonstrate a practical RRAM fuse using TiOx-based RRAM cells, and explain its basic operational principles. The fuse is stimulated by trains of identical pulses where successive pulse trains feature opposite polarities. In response, we observe a gradual (analogue) drop in resistive state followed by a gradual recovery phase regardless of input stimulus polarity, echoing traditional, binary CRS behavior. This analogue switching property opens the possibility of operating the RRAM fuse as a single-component step change detector. Moreover, we discover that the characteristics of the individual RRAM devices used to demonstrate the RRAM fuse concept in this work allow our fuse to be operated in a regime where one of the two constituent devices can be switched largely independently from the other. This property, not present in the traditional CRS, indicates that the inherently analogue RRAM fuse architecture may support additional operational flexibility through, for example, allowing finer control over its resistive state.

中文翻译:

RRAM 内存保险丝的实际演示

自问世以来,电阻随机存取存储器 (RRAM) 熔丝一直是一个很好的例子,说明如何组合少量 RRAM 设备以获得单个设备无法实现的有用行为。在这项工作中,我们将 RRAM 保险丝概念与互补电阻开关 (CRS) 的概念联系起来,利用该链接通过实验证明使用 TiO x的实用 RRAM 保险丝基于 RRAM 单元,并解释其基本操作原理。熔断器由相同脉冲串激励,其中连续脉冲串具有相反的极性。作为回应,我们观察到电阻状态逐渐(模拟)下降,然后是逐渐恢复阶段,无论输入刺激极性如何,这与传统的二进制 CRS 行为相呼应。这种模拟开关特性开启了将 RRAM 熔断器用作单组件阶跃变化检测器的可能性。此外,我们发现在这项工作中用于演示 RRAM 熔断器概念的各个 RRAM 器件的特性允许我们的熔断器在两个组成器件中的一个可以在很大程度上独立于另一个的情况下运行。这个属性,在传统的 CRS 中不存在,
更新日期:2021-05-05
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