The lateral photovoltage scanning method (LPS) detects doping inhomogeneities in semiconductors such as Si, Ge and \({\hbox {Si}_{\hbox {x}}\hbox {Ge}_{1-\hbox {x}}}\) in a cheap, fast and nondestructive manner. LPS relies on the bulk photovoltaic effect and thus can detect any physical quantity affecting the band profiles of the sample. LPS finite volume simulation using commercial software suffer from long simulation times and convergence instabilities. We present here an open-source finite volume simulation for a 2D Si sample using the ddfermi simulator. For low injection conditions we show that the LPS voltage is proportional to the doping gradient. For higher injection conditions, we directly show how the LPS voltage and the doping gradient differ and link the physical effect of lower local resolution to the screening effect. Previously, the loss of local resolution was assumed to be only connected to the enlargement of the excess charge carrier distribution.

横向光电压扫描方法（LPS）可检测半导体中的掺杂异质性，例如Si，Ge和\（{\ hbox {Si} _ {\ hbox {x}} \ hbox {Ge} _ {1- \ hbox {x}} } \）以便宜，快速且无损的方式进行。LPS依赖于整体光伏效应，因此可以检测到影响样品能带分布的任何物理量。使用商业软件进行的LPS有限体积模拟具有较长的模拟时间和收敛不稳定性。我们在这里使用ddfermi对2D Si样品进行开源有限体积模拟模拟器。对于低注入条件，我们表明LPS电压与掺杂梯度成正比。对于较高的注入条件，我们直接显示LPS电压和掺杂梯度如何不同，并将较低的局部分辨率的物理效应与屏蔽效应联系在一起。以前，假定局部分辨率的损失仅与过量电荷载流子分布的扩大有关。