We present an alternative mechanism to control domain wall motion, whose directions are manipulated by the amplitude of electrical current rather than its sign when modulating the exchange stiffness A while maintaining the Dzyaloshinskii-Moriya interaction constant D. To confirm this mechanism, we observe this type of domain wall motion and demonstrate linear magnetic switching without hysteresis effect via adjusting A of a $\mathrm{Ta}/\mathrm{Pt}/\mathrm{Co}/\mathrm{Ta}$ multilayer device with ion implantations. We further find field-free biased and chirally controllable multistate switching at the lateral interface of ion exposed and unexposed areas, which is due to current-induced Néel wall motion and a strong exchange coupling at this interface.

中文翻译：

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电流感应的全线性多态磁开关

我们提出了另一种机制，以控制磁畴壁运动，其方向由电流而不是它的符号的振幅调制交换刚度时被操纵甲同时保持Dzyaloshinskii-Moriya相互作用常数d。为了确认这种机制，我们观察了这种类型的畴壁运动，并通过调整A的A来演示没有磁滞效应的线性磁开关。$钽/铂/\mathrm{有限公司}/钽$离子注入的多层器件。我们进一步在离子暴露和未暴露区域的横向界面处发现了无场偏置和手性可控的多态开关，这是由于电流引起的奈尔壁运动和在该界面处的强交换耦合所致。