Low frequency noise (LFN) studies are carried out on n-channel gate all around nanowire (GAA NW) FETs. Measurements both as a function of applied polarisation at fixed temperature and conserving the same drain current bias points as a function of temperature are performed, to investigate the predominant flicker noise fluctuation mechanism and to execute low frequency noise spectroscopy allowing to identify the active traps in the depletion area of the devices. The good correlation between the normalized drain current noise S_Id / I_d² and the transconductance to drain current ratio squared (g_m/I_d)² enables to establish that the 1/f noise is related to the carrier number fluctuations mechanisms for all investigated temperatures. The study of the generation recombination (GR) noise as a function of temperature confirms the presence of a GR component for which the characteristic frequency is independent on the applied voltage and present variation with the temperature, suggesting that they are related to active traps located in the Si film. Active traps related to hydrogen and divacancies were identified.

围绕纳米线（GAA NW）FET在n沟道栅极上进行了低频噪声（LFN）研究。既进行了在固定温度下施加的极化的函数的测量，又根据温度保持了相同的漏极电流偏置点的测量，以研究主要的闪烁噪声波动机制并执行低频噪声光谱分析，从而确定了有源阱中的有源阱。设备的耗尽区。归一化的漏极电流噪声S _Id / I _d ²与跨导与漏极电流比平方（g _m / I _d）²之间的良好相关性可以确定1 / f噪声与所有研究温度下的载流子数量波动机制有关。对生成重组（GR）噪声随温度变化的研究证实了存在GR分量的原因，其GR分量的特征频率与所施加的电压无关，并且随温度而变化，这表明它们与位于系统中的有源阱有关。硅膜。确定了与氢和空位有关的活性阱。