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Thin film cadmium telluride solar cells on ultra-thin glass in low earth orbit—3 years of performance data on the AlSat-1N CubeSat mission
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2021-05-05 , DOI: 10.1002/pip.3423
Dan A. Lamb 1 , Stuart J. C. Irvine 1 , Mark A. Baker 2 , Craig I. Underwood 3 , Simran Mardhani 3
Affiliation  

This paper details 3 years of cadmium telluride (CdTe) photovoltaic performance onboard the AlSat-1N CubeSat in low earth orbit. These are the first CdTe solar cells to yield I–V measurements from space and help to strengthen the argument for further development of this technology for space application. The data have been collected over some 17 000 orbits by the CubeSat with the cells showing no signs of delamination, no deterioration in short circuit current or series resistance. The latter indicating that the aluminium-doped zinc oxide transparent front electrode performance remained stable over the duration. Effects of temperature on open circuit voltage (Voc) were observed with a calculated temperature coefficient for Voc of −0.19%/°C. Light soaking effects were also observed to increase the Voc. The fill factor decreased over the duration of the mission with a major contribution being a decrease in shunt resistance of all four of the cells. The decrease in shunt resistance is speculated to result from gold diffusion from the rear contacts into the absorber and through to the front interface. This has likely resulted in the formation of a deep trap state within the CdTe and micro shunts formed between the rear and front contact. Further development of this technology should therefore utilise more stable back contacting methodologies more commonly employed for terrestrial CdTe modules.

中文翻译:

低地球轨道超薄玻璃上的碲化镉薄膜太阳能电池——AlSat-1N CubeSat 任务的3 年性能数据

本文详细介绍了 AlSat-1N CubeSat 在低地球轨道上 3 年的碲化镉 (CdTe) 光伏性能。这些是第一批从太空产生 I-V 测量值的 CdTe 太阳能电池,有助于加强进一步开发该技术以用于太空应用的论据。CubeSat 在大约 17 000 个轨道上收集了数据,电池没有显示分层迹象,短路电流或串联电阻没有恶化。后者表明铝掺杂氧化锌透明前电极性能在整个持续时间内保持稳定。温度对开路电压 ( V oc ) 的影响通过计算出的V oc温度系数进行观察-0.19%/°C。还观察到光浸泡效应会增加V oc。填充因子在整个任务期间下降,主要贡献是所有四个电池的分流电阻下降。据推测,分流电阻的降低是金从后触点扩散到吸收器并通过前界面的结果。这很可能导致在 CdTe 内形成深陷阱状态,并在后触点和前触点之间形成微分流。因此,这项技术的进一步发展应该利用更稳定的背接触方法,更常用于地面 CdTe 模块。
更新日期:2021-05-05
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