Graphene growth on a Pt(111) substrate exposed to benzene was studied at substrate temperatures between 800 K and 1100 K. The effects of the substrate temperature during benzene exposure and post-annealing were examined. It was revealed that the substrate temperature during benzene exposure determined the graphene size, which was measured using scanning tunneling microscopy (STM). Nanographenes (NGs) of ~10 nm in size. were obtained by exposing the substrate to benzene at 800 K and post-annealing at 1100 K. The presence of a C–Pt bond, which may fix the carbon atoms on the Pt(111) surface and suppress any further growth of graphene, was confirmed by the carbon K-edge near-edge X-ray absorption fine structure spectroscopy (C K NEXAFS) and X-ray photoelectron spectroscopy (XPS) for the NG. Angle resolved photoemission spectroscopy (ARPES) performed on the NG has a reduced density of states at the Fermi level.

研究了石墨烯在暴露于苯的Pt（111）衬底上在800 K和1100 K之间的温度下的生长情况。研究了苯暴露和后退火过程中衬底温度的影响。揭示了苯暴露期间的基板温度确定了石墨烯尺寸，该尺寸是使用扫描隧道显微镜（STM）测量的。尺寸约10 nm的纳米石墨烯（NGs）。通过在800 K下将底物暴露于苯并在1100 K下进行后退火获得。C-Pt键的存在可能将碳原子固定在Pt（111）表面上，并抑制了石墨烯的任何进一步生长。 NG的碳K边缘近边缘X射线吸收精细结构光谱学（CK NEXAFS）和X射线光电子能谱学（XPS）证实了这一点。