This article proposes an analytical model for channel potential and threshold voltage for negative capacitance junctionless FinFET (NC-JL FinFET). The Poisson's equation has been solved in collaboration with Landau–Khalatnikov equation to obtain analytical model for electrostatic potential distribution, threshold voltage and DIBL. The effect of fringing field on the potential distribution function due to source/drain spacer has also been taken into consideration. The results of proposed models are also validated and compared with simulated results of Sentaurus TCAD device simulator. The effect of various physical parameters like thickness of ferroelectric layer, fin thickness, spacer length, gate dielectric constant etc. on the performance of device has been studied. Further, the performance is also examined for different technology nodes and its (in context of) SCEs.

本文提出了负电容无结FinFET（NC-JL FinFET）的沟道电势和阈值电压的分析模型。泊松方程已与Landau–Khalatnikov方程一起求解，以获得静电势分布，阈值电压和DIBL的分析模型。由于源极/漏极隔离物，边缘场对电势分布函数的影响也已被考虑在内。所提出模型的结果也得到了验证，并与Sentaurus TCAD设备模拟器的仿真结果进行了比较。研究了诸如铁电层厚度，鳍片厚度，间隔物长度，栅极介电常数等各种物理参数对器件性能的影响。更多，