The paper presents a theoretical model which illustrates the electron capture and emission dynamics in InAs/GaAs quantum dot (QD) photodetector and describes the bandstructure dependent dark current generation. Result of the study predicts the possibility of excessive dark current that depends on the different rates of thermal and phonon assisted tunneling emissions from the quantized energy states. Variation of QD size can alter the quantized states and control the emission rates. Our findings shows that high dark current generated in a QD at a particular temperature and bias voltage can be reduced significantly by changing the size. Hence, optimum QD size is proposed that generates minimum the dark current at different temperatures of operation and applied bias.

本文提出了一个理论模型，该模型说明了InAs / GaAs量子点（QD）光电探测器中的电子捕获和发射动力学，并描述了依赖于能带结构的暗电流生成。研究结果预测了暗电流过大的可能性，暗电流取决于来自量子化能量状态的热和声子辅助隧穿发射的不同速率。QD大小的变化可以改变量化状态并控制排放速率。我们的发现表明，通过改变尺寸，可以显着降低QD在特定温度和偏置电压下产生的高暗电流。因此，提出了最佳QD尺寸，该尺寸在不同的工作温度和施加的偏压下产生最小的暗电流。