The optical properties of green InGaN/GaN multiple quantum wells (MQWs) can be greatly affected by the large lattice mismatch between the GaN barrier and the InGaN quantum well due to the introduction of stress. To improve the quality of green MQWs, the insertion of a pre-layer before the MQWs is generally adopted. However, there does not exist a clear theoretical model by which to explain the effects of the pre-layer. In the present study, a lattice evolution model is proposed to describe the epitaxial growth process, by which the stress-blocking effect of the InGaN pre-layer is demonstrated. In addition, optimal designs for the active region of green MQWs with pre-layer are discussed. These results provide a theoretical basis for the preparation of high-quality green InGaN/GaN MQWs.

由于应力的引入，GaN势垒和InGaN量子阱之间的晶格失配会极大地影响绿色InGaN / GaN多量子阱（MQW）的光学性能。为了提高绿色MQW的质量，通常采用在MQW之前插入预层的方法。但是，没有一个清晰的理论模型可以用来解释前层的效果。在本研究中，提出了一种晶格演化模型来描述外延生长过程，从而证明了InGaN预层的应力阻挡作用。此外，还讨论了带有预层的绿色MQW有源区域的最佳设计。这些结果为制备高质量绿色InGaN / GaN MQW提供了理论基础。