With the rapid development of semiconductor process, both tunneling field effect transistor (TFET) and negative capacitance field effect transistor (NCFET) are regarded as the effective low power devices. In this paper, a novel silicon-based dual source U-shaped channel TFET with negative capacitance (NCDU-TFET) is proposed and investigated by Synopsys Sentaurus TCAD. We pick ferroelectric material (Hf_0.5Zr_0.5O₂) as the gate dielectric. The higher electric field caused by negative capacitance effectively increases the tunneling rate, so the super-steep subthreshold swing (SS) and higher on-state current are obtained for NCDU-TFET. Besides, the impacts of device parameters including gate dielectric layer thickness, coercive electric field and remnant polarization are also analyzed systematically in this paper. The simulation results indicate the average SS of NCDU-TFET is 17.04mV/dec, which is much lower than that of DU-TFET. And the on-state current of NCDU-TFET is nearly three orders of magnitude higher than that of DU-TFET. So NCDU-TFET has the potential to be used as a low-power component for large-scale integrated circuits.

随着半导体工艺的飞速发展，隧穿场效应晶体管（TFET）和负电容场效应晶体管（NCFET）均被视为有效的低功率器件。在本文中，由Synopsys Sentaurus TCAD提出并研究了一种新型的具有负电容的基于硅的双源U型沟道TFET（NCDU-TFET）。我们选择铁电材料（Hf _0.5 Zr _0.5 O ₂）作为栅极电介质。由负电容引起的较高电场有效地提高了隧穿速率，因此对于NCDU-TFET，获得了超陡峭的亚阈值摆幅（SS）和较高的导通状态电流。此外，还系统地分析了器件参数对栅极介电层厚度，矫顽电场和剩余极化的影响。仿真结果表明，NCDU-TFET的平均SS为17.04mV / dec，远低于DU-TFET。NCDU-TFET的导通电流比DU-TFET高近三个数量级。因此，NCDU-TFET有潜力用作大规模集成电路的低功耗组件。