Epitaxial Cr₂AlC MAX phase thin films were grown on MgO(111) and Al₂O₃(0001) by pulsed laser deposition (PLD) at 600°C. X-ray diffraction and morphology studies of Cr₂AlC thin films on MgO (111) reveal phase purity, columnar growth, the epitaxial relation Cr₂AlC(0001) || MgO(111) and Cr₂AlC [11-20] || MgO[10-1] and similar growth behaviour on Al₂O₃(0001). Resistivity measurements show semiconductor-like behaviour for 10 and 20 nm thick films, and metallic-like behaviour for thicker films, suggesting a percolation thickness slightly above 20 nm. Our results demonstrate the potential of PLD as a novel method for the growth of epitaxial MAX phase thin films.

通过在600°C下通过脉冲激光沉积（PLD）在MgO（111）和Al ₂ O ₃（0001）上生长外延Cr ₂ AlC MAX相薄膜。在MgO（111）上Cr ₂ AlC薄膜的X射线衍射和形貌研究表明，相纯度，柱状生长，外延关系Cr ₂ AlC（0001）|| MgO（111）和Cr ₂ AlC [11-20] || MgO [10-1]和类似的在Al ₂ O ₃上的生长行为（0001）。电阻率测量结果表明，对于10和20 nm厚的薄膜，其表现为类似半导体的行为，而对于较厚的薄膜，则为类似金属的行为，这表明渗滤厚度略高于20 nm。我们的结果证明了PLD作为外延MAX相薄膜生长的新方法的潜力。